Method and apparatus for selective removal of material from wafer alignment marks

ABSTRACT

A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a continuation of application Ser. No.09/639,421, filed Aug. 14, 2000, pending, which is a continuation ofapplication Ser. No. 08/916,997, filed Aug. 20, 1997, now U.S. Pat. No.6,103,636, issued on Aug. 15, 2000.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] This invention relates to improved semiconductor processingtechnology. More specifically, the present invention relates to animproved process and apparatus for locally removing any desired materialfrom predetermined areas of a silicon wafer in process during theformation of integrated circuits thereon, such as the removal ofmaterial from the wafer alignment mark areas of a silicon wafer.

[0004] 2. State of the Art

[0005] The fabrication of integrated circuits on silicon wafers utilizesmany differing processes and materials. For instance, photolithographictechniques are used to pattern the various gates on the silicon chip. Assophisticated pattern definition technologies have been used, thegeometries of the integrated circuit components have shrunk from the 6micron size of the late 1970's to the submicron technologies of the late1980's to the deep submicron regions of the 1990's. Therefore, it hasbecome increasingly important to carefully align the wafer duringsemiconductor device manufacturing processes. Also, as the size of thefeatures of the integrated circuits has become increasingly smaller andthe spacing of the semiconductor devices has decreased on the wafer, ofnecessity, the size of any predetermined area of the wafer containingany feature or circuit component on the wafer has decreased. Forinstance, the alignment marks on the wafer used to align the waferduring manufacturing processes and the area surrounding the alignmentmarks on the wafer have become increasingly smaller.

[0006] Due to various constraints in semiconductor device manufacturingprocesses, it is critical that predetermined areas of the wafer be freeof material contamination during the process. As an example, thealignment marks on the wafer should be kept free of contaminants so thatthe process equipment can easily locate and use such alignment marks. Invarious semiconductor manufacturing processes, the alignment marks caneasily become contaminated or covered with various process materials. Insuch instances, it is necessary to clean the alignment marks on thewafer before any subsequent processing occurs to ensure proper alignmentof the wafer on the process equipment.

[0007] As one example of such process problems, after the application ofa photoresist material used in a circuit forming process and thesubsequent etching of the wafer to form the desired circuit or portionthereof, the alignment marks on the wafer may be covered withphotoresist material which must be removed prior to the continuedprocessing of the wafer.

[0008] As another example, a chemical mechanical planarization processis the preferred method of planarizing various films and coatings onwafers. However, a chemical mechanical planarization process does notnecessarily uniformly remove material from the wafer surface due toeither dishing of the polishing pad caused by surface irregularities onthe wafer and/or the non-uniform application of the polishing slurryover the wafer surface. Such problems occur, particularly, when using achemical mechanical planarization process to remove refractory metalfilms and the like. Since the refractory metal film is not of uniformthickness, the refractory metal film may not be removed in the areas ofthe wafer where alignment marks are present or other predetermined areasof the wafer. Furthermore, the alignment marks, or other predeterminedareas, on the wafer may also be covered with slurry material used in thechemical mechanical planarization process or have residual refractorymetal film remain which has not been removed during the chemicalmechanical planarization process thereon, thereby obscuring thealignment marks. Therefore, it is desirable to have a method andapparatus for cleaning predetermined areas of the wafer, such as thealignment marks of wafers, after chemical mechanical planarizationprocesses thereon.

[0009] As an example of such wafer process problems discussed above, thefabrication of multi-level interconnections in integrated circuits hasbeen facilitated through the use of tungsten, a refractory metal.However, tungsten is difficult to etch selectively because the surfaceof most tungsten films deposited using chemical vapor depositiontechniques is rough and because tungsten and silicon dioxide formvolatile fluoride compounds. Due to such problems, it is difficult toselectively etch tungsten to remove the unwanted tungsten that remainson the low areas of the wafer surface, such as those areas wheresemiconductor devices are being formed, or in predetermined areas of thewafer, such as those areas of the wafer surface where alignment marksexist.

[0010] Since a tungsten film covers the surface of semiconductor devicesbeing formed on the wafer surface, the tungsten film must be etched backselectively so that the tungsten film only remains in the vias orcontact holes to eliminate the tungsten film in the low areas of thewafer surface. Several methods use either a photoresist or a polyimidesacrificial film to planarize the tungsten film. Using these methodsrequires the sacrificial film to be highly planarized, followed by anover-etch to clear all of the tungsten film from the low areas of thewafer surface that are present after the planarization of the wafersurface. Since tungsten etching is difficult to control to produce auniform surface on the wafer, over-etching is often required to insuretungsten removal. However, over-etching can result in recessed tungstenplugs which interconnect the integrated circuitry being formed on thewafer in process, particularly when the wafer is not of uniformthickness. Additionally, over-etching may not remove the tungsten fromall low areas of the wafer surface, such as those areas where thealignment marks of the wafer are present or other predetermined areas ofthe wafer.

[0011] In a prior art process, described in U.S. Pat. No. 5,271,798, amethod for the selective etching of the alignment mark areas of thewafer is set forth to selectively etch the alignment mark areas of thewafer using a wet etching process which can be controlled and isolatedto a specific area of the wafer. In the prior art process, tungsten isselectively etched locally from the alignment marks on the wafer eitherbefore or after the chemical mechanical planarization process. Thewafers are flat aligned and a tungsten etch solution is introducedthrough an enclosed etchant dispensing apparatus onto low lying areas ofthe wafer surface which result from the alignment marks used foraligning various photolithography mask steps. Since the alignment marksare normally a few hundred microns in size and if a large amount ofunused silicon area exists around the alignment marks, the alignmentarea constraints regarding an enclosed etchant dispensing apparatus andwafer are not too severe. Also, when a large amount of unused siliconarea exists around the alignment marks, the tungsten plugs in thesemiconductor device being formed on the wafer can be easily protectedfrom the wet etch. Either during or after the etch, the etching productsare removed and the wafers are cleaned by being rinsed in distilledwater.

[0012] In U.S. Pat. No. 5,271,798, a method and apparatus is illustratedfor the cleaning of alignment marks on a wafer. The apparatusillustrated uses a cylindrical containment apparatus having a seal onthe bottom thereof to sealingly engage the area surrounding thealignment mark on a wafer. An etchant is dispensed through thecontainment apparatus onto the alignment mark on the wafer to etchcontaminants therefrom with the etchant being removed from the alignmentmark area by a vacuum. Such a prior art method and apparatus require aphysical contact seal between the containment apparatus and the waferarea surrounding the alignment mark which may cause damage to thesurface of the wafer or surrounding semiconductor devices being formedon the wafer.

[0013] However, as discussed previously, with the increasing density ofsemiconductor devices formed on the wafer surface, the area availablefor the placement of semiconductor devices and the surroundingpredetermined areas of the wafer which must be kept clean during waferprocessing has decreased. For example, the alignment marks and theunused silicon area surrounding the alignment marks have decreased foruse of the etching equipment during the removal of material from thealignment marks of the wafer.

[0014] Therefore, a need exists for an improved method and apparatus forthe reliable etching of any material, such as a photoresist material,chemical mechanical planarization process materials, a refractory metal,etc., from predetermined areas of the wafer and the surrounding areas,such as the alignment marks on wafers, without damage to the surroundingwafer area or the circuitry components on the wafer.

BRIEF SUMMARY OF THE INVENTION

[0015] The present invention is directed to an improved process andapparatus for locally removing material from predetermined areas of thewafer, such as the wafer alignment mark areas of a silicon wafer inprocess during the formation of integrated circuits thereon. A processand apparatus of the present invention locally removes material frompredetermined areas of the wafer, such as the wafer alignment mark areasof a silicon wafer, in process during the formation of integratedcircuits thereon without contacting the area surrounding thepredetermined area of the wafer, such as the alignment mark of thewafer, while maintaining the etching material within the predeterminedarea, such as the alignment mark area, to prevent damage to thesurrounding semiconductor circuits. The process comprises the steps ofaligning the predetermined area, such as the alignment marks, on thewafer to an etchant dispensing apparatus, positioning a portion of theetchant dispensing apparatus adjacent the surface of the wafer at thepredetermined area, dispensing at least one etchant agent onto thepredetermined area, such as the alignment mark, and removing any etchingagent or cleaner or rinse material from the wafer. The apparatus for thecleaning of an area of a semiconductor wafer using a material comprisinga tube having a bore therethrough and exterior wall, the tube supplyinga material to said area of the wafer and an annular member having aninterior wall surrounding the tube, the annular member having a thinannular edge thereon for positioning adjacent a portion of thepredetermined area of the wafer, such as the alignment mark area of thewafer, during the cleaning thereof, the annular member forming anannular space between the tube and the interior wall of the annularmember.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

[0016]FIG. 1 is a cross-sectional view of a portion of a wafer inprocess;

[0017]FIG. 2 is a cross-sectional view of a portion of a wafer inprocess with a portion of the apparatus of the present inventionillustrated;

[0018]FIG. 2A is a cross-sectional view of a portion of a wafer inprocess with a portion of the apparatus of the present inventionillustrated having a modified thin annular edge thereon;

[0019]FIG. 3 is a cross-sectional view of a portion of a wafer inprocess having the area of the alignment marks being cleaned by theapparatus and method of the present invention;

[0020]FIG. 4 is a first side view of the cleaning apparatus of thepresent invention;

[0021]FIG. 5 is a top view of the cleaning apparatus of the presentinvention;

[0022]FIG. 6 is a second side view of the cleaning apparatus of thepresent invention;

[0023]FIG. 7 is a third side view of the cleaning apparatus of thepresent invention; and

[0024]FIG. 8 is a top view illustrating a localized etchant dispensingapparatus aligned to a wafer and positioned at alignment marks thatreside on the wafer.

DETAILED DESCRIPTION OF THE INVENTION

[0025] Referring to drawing FIG. 1, a silicon wafer 10 has an overlyinglayer 11 of borophosphosilicate glass (BPSG) in which patterns forcircuits have been etched exposing silicon wafer 10 at alignment marks12 on the wafer 10, a predetermined area of the wafer. A material hasbeen formed over the wafer surface and the surface planarized, typicallyusing a chemical mechanical planarization process leaving residue 13 atthe alignment marks 12, a predetermined area of the wafer, on the wafer10. Typically, a refractory metal, tungsten, will have been deposited bychemical vapor deposition over the wafer surface and the surfaceplanarized using a chemical mechanical planarization process leavingresidue 13 at the alignment marks 12 on the wafer 10 or otherpredetermined areas of the wafer. The residue 13 may include thechemical mechanical planarization process slurry material, a refractorymetal residue, a photoresist residue, a dielectric material residue, apolysilicon material residue, etc.; i.e., for example, any residue froma semiconductor manufacturing process may be present in the alignmentmarks 12 on the wafer 10 to be removed therefrom or from any desiredpredetermined area of the wafer.

[0026] Referring to drawing FIG. 2, the wafer 10 is mounted in asubstantially flat alignment (horizontal, perpendicular alignment) priorto the local dispersion of a wet etching agent to remove residue 13. Thewet etching agent may comprise well known etching agents, such asliquid, liquid vapor, gases, etc., examples of such including ammonia,hydrogen fluoride, nitric acid, hydrogen peroxide, ammonium fluoride,etc. The etchant may be heated, if desired, by any suitable source, suchas ultrasonic energy, laser heating, etc. The wafer surface overlyinglayer 11 must be positioned in relation to apparatus 21 such that lowerthin annular edge 22, an annular type knife edge of the apparatus 21, ispositioned adjacent layer 11, but not in contact with layer 11, toprovide a “virtual” seal or vacuum therewith. An etching agent isintroduced through a tubular member 52, a needle-like member of etchantdispensing apparatus 21 (also referred to as “etching apparatus” or“cleaning apparatus” 21) onto the alignment marks 12 on the wafer 10 toremove the residue 13. Since the alignment mark 12 is a few hundredmicrons in size and little unused area exists on the wafer 10surrounding the mark 12, the constraints regarding the size and use ofthe etching apparatus are severe in order to ensure that anysemiconductor circuit components in the electronic circuitry located onthe wafer surrounding an alignment mark 12 are protected from theetching process. The etching apparatus 21 is an enclosed apparatus withthe thin annular edge 22 thereof creating a “virtual” seal or vacuumwith the underlying glass (BPSG) layer 11 by a suction being appliedthrough annular space 56 formed between the interior annular wall ofannular member 54 and the exterior wall of tubular member 52 of theetching apparatus 21. Sufficient suction is applied in the annular space56 so that the pressure of the existing atmosphere surrounding theexterior of the thin annular edge 22 is greater than the pressure in theannular space 56 with the existing atmosphere surrounding the thinannular edge 22 being drawn into the annular space 56 between thetubular member 52 and annular member 54, thereby preventing any leakageof etchant from the annular space 56. The thin annular edge 22 of theetching apparatus 21 does not contact the surface of the layer 11,thereby preventing any damage thereto. The surrounding atmosphere of theannular member 54 flows into the gap formed between the lower edge ofthin annular edge 22 and the surface of layer 11 (illustrated by thearrows entering into annular space 56 in drawing FIG. 2) creating the“virtual” seal or vacuum between the etching apparatus 21 and the layer11, thereby preventing any etchant material being used from flowing fromthe annular space 56 onto the surrounding area of layer 11 of theexterior to annular member 54. The thin annular edge 22 is located asclose as possible to the surface of the layer 11 on the wafer 10 withoutbeing in contact therewith.

[0027] Referring to drawing FIG. 2A, if desired, more than one thinannular edge 22 may be used on the end of annular member 54 to create alabyrinth type “virtual” seal to more effectively prevent any fluid flowfrom the gap between the end of the annular member 54 and the surface ofthe layer 11. Such a labyrinth type thin annular edge 22′ is illustratedin drawing FIG. 2A as having two thin annular edges 22′ formed on thebottom of the annular member 54.

[0028] In both the thin annular edge 22 and the labyrinth type thinannular edge 22′, neither contacts the surface of the layer 11 toprevent the flow of etchant from the annular space 56 onto the surfaceof the layer 11 exterior to the annular member 54. But rather, thesuction or vacuum applied to the annular space 56 draws the atmospheresurrounding the exterior of the annular member 54 into the annular space56, thereby preventing any substantial leakage of any material in theannular space 56 to the exterior of the annular member 54. Additionally,it should be understood that the annular space 56 refers to any shapeannular area formed between any two geometrically shaped members. Thatis, the tubular member 52 may have any desired cross-sectional geometricshape, such as cylindrical, hexagonal, square, octagon, ellipsoid, etc.,and the annular member 54 may have any desired cross-sectional geometricshape, such as cylindrical, hexagonal, square, octagon, ellipsoid, etc.,and the annular area 56 formed therebetween by such shaped members willhave any resulting cross-sectional configuration.

[0029] Alignment between wafer 10 and etchant dispensing apparatus 21may be accomplished by any suitable well known aligning and maneuveringtechniques for aligning the wafer 10 into position. Though it ispreferred that the wafer is at a 90° angle, perpendicular to the etchingapparatus 21, the orientation of the wafer 10 and etching apparatus 21can be any desired position as long as the thin annular edge 22 or 22′of the etching apparatus 21 is located substantially adjacent, but notin contact with, the surface of the layer 11 on the wafer 10. Etchingby-products are removed by suctioning or vacuuming them from thealignment mark 12 through annular space 56 formed between the interiorannular wall of annular member 54 and the exterior wall of tubularmember 52 of the etching apparatus 21.

[0030] Referring to drawing FIG. 3, residue 13 (shown in FIGS. 2 and 2A)has been removed from alignment marks 12 and the etching by-productsremoved by suction applied through annular space 56 of the etchingapparatus 21. In addition to the removal of etching byproducts from thealignment mark 12 on the wafer 10 using suction through annular space56, the removal of the etching by-products may be performed during thestep of removing etching residue 13 (in situ) from alignment mark 12 byflowing water, or any desired cleaning material or agent or rinsingmaterial or agent, into the etchant dispensing apparatus 21 afterdispensing the etching agent therethrough to have such wash the residuefrom the alignment mark 12. Once the etching by-product is removed,wafer 10 is then cleaned by rinsing it with deionized water or othersuitable well known cleaning or rinsing agents.

[0031] Alternately, the selective etching of any material in thealignment marks 12 may be performed prior to planarization of the layer11. Performing the selective etch prior to planarization of the layer 11has an advantage in that the planarization removes any contaminantswhich may have been added on the wafer surface during selective wetetching of the alignment marks 12 (free from oxide or other particles).

[0032] Referring to drawing FIG. 4, the cleaning head 50 of the cleaningapparatus 21 previously described herein is shown. The cleaning head 50comprises a cylindrical body 51 having an elongated annular member 54 onthe end of the stem 62 thereof, having in turn, thin annular edge 22located thereon for engaging the surface of the wafer 10 and tubularmember 52 located therein for supplying the etching products to thealignment mark 12 of the wafer 10. The cylindrical body 51 comprises agenerally cylindrical head 60 and generally cylindrical stem 62 havingelongated annular member 54 thereon. Cylindrical head 60 includes aplurality of bores 64 therein, each bore 64 having threaded aperture 66thereon for connection to a supply line (not shown), through whichetching products are supplied during the etching process, one or morebores 68, each bore 68 having an intersecting blind bore 70 connectingtherewith which is connected to a suitable source of suction or vacuum,through which etching by-products are suctioned or vacuumed from thealignment marks 12 on the wafer 10 during the etching of materialtherefrom and a bore 72 which intersects with bores 64 and within whichis contained tubular member 52 which, in turn, supplies etching productsto the alignment mark 12 of the wafer 10 during the etching of materialtherefrom. The stem 62 of the cleaning head 50 includes the lower end 74of bore 68 extending from cylindrical head 60, bore 76, the wall ofwhich forms annular space 56 with respect to the exterior wall oftubular member 52, and elongated annular member 54 on the end thereofhaving thin annular edge 22 or 22′ thereon which is located adjacent,but not in contact with, the surface of the wafer 10 or any layer 11 onthe wafer 10 which has the alignment marks 12 thereon having materialremoved therefrom, in turn, during etching. As shown, the tubular member52 extends throughout the bore 76 forming the annular space 56 for theremoval of etching products using a suction or vacuum source during theetching of the alignment marks 12 of the wafer 10. The cleaning head 50may be made of any suitable material, may be formed of any desirednumber of pieces for the convenience of assembly, cleaning, orreplacement thereof, and may be formed in any desired geometric shape.The tubular member 52 typically comprises hypodermic needle stocktubing, such as a 24 gage, i.e., 0.022 inches in external diameter,standard hypodermic needle stock tubing, although any suitable tubingmay be used, such as Teflon™ tubing, glass tubing, polymeric tubing,etc. Furthermore, the tubular member 52 may have any desired geometriccross-sectional shape, such as cylindrical, hexagonal, square,octagonal, ellipsoid, etc.

[0033] Referring to drawing FIG. 5, the cleaning head 50 is shown in atop view to illustrate the orientation of the various bores therein. Asshown, the bores 64, each having threaded aperture 66 thereon, aregenerally spaced sixty degrees (60°) from each other and extendhorizontally within the head 60 intersecting bore 72 therein. Althoughthe bores 64 have been illustrated as located generally sixty degreesfrom each other, they may be located in any desired spacing. The blindbore 70 intersects bore 68 of the head 60 to allow a source of vacuum tobe supplied to the cleaning apparatus 21 during the use thereof toremove the etching products from the alignment marks 12 on the wafer 10during the etching thereof. The bore 72 extends vertically within thecylindrical head 60, having the tubular member 52 being retained thereinby any suitable means, such as an interference fit, adhesively bonded,etc.

[0034] Referring to drawing FIG. 6, the cleaning head 50 is shown in aside view to further illustrate the various bores therewithin. Asillustrated, the various bores 72 and 76 are concentrically locatedwithin cylindrical head 60 and stem 62. The thin annular edge 22 on theelongated annular member 54 of the stem 62 is formed by forming achamfered annular surface having an included angle of approximatelyninety degrees (90°) therein. Although a ninety degree angle has beenillustrated, the angle may be formed at any convenient angle which willprovide a thin annular edge 22 on the elongated annular member 54 forbeing located adjacent the surface of the wafer 10 or any layer 11located on the wafer 10 during the etching of the alignment marks 12thereon to remove material therefrom. The thin annular edge 22 does notneed to provide a fluid tight seal with respect to the wafer surface,but rather creates or forms a “virtual” seal or vacuum with respect tothe wafer surface or the surface of a layer 11 on the wafer 10, becausea sufficient amount of suction or vacuum is used to remove the etchingproducts from the alignment marks 12 being etched so that the gap orspace existing between the thin annular edge 22 and the layer 11 on thewafer 10, and the surrounding atmosphere, typically air, will be drawninto the annular area 56, thereby preventing any etching products fromescaping from the gap or space. In this manner, in contrast to the priorart, no fluid tight seal or resilient fluid tight seal is needed on theend of the elongated annular member 54 of the stem 62, therebyeliminating all problems associated with the formation and maintenanceof a fluid tight seal or resilient fluid tight seal thereon and, moreimportantly, any damage a fluid tight seal or resilient seal causes tothe surface of the wafer 10 or any layer 11 on the wafer 10.

[0035] Referring to drawing FIG. 7, the cleaning head 50 is shown inanother side view to illustrate the relationship of the various bores64, 68, 72, 76, and the lower end 74 of the bore 68 and the intersectionthereof with bore 76. Again, the bores 72 and 76 are concentrically,vertically located within the cylindrical head 60 and stem 62 of thecleaning head 50.

[0036] Referring to drawing FIG. 8, the cleaning apparatus 21 isschematically illustrated during the cleaning of alignment marks 12 on awafer 10. Each cleaning apparatus 21 has a plurality of lines 80, eachline 80 being connected to threaded aperture 66 to supply etchingproduct to the cleaning head for the cleaning of an alignment mark 12 onthe wafer 10, while each cleaning head also has vacuum line 82 connectedto blind bore 70 to supply suction or vacuum to the cleaning head 50 toremove etching products from the cleaning head. It should be noted thatthe present invention contemplates either moving the cleaning head 50 toan alignment mark 12 on a wafer 10 to perform the cleaning of thealignment mark 12 or moving the alignment mark 12 on the wafer 10 to afixed or stationary location of the cleaning head 50. All that isnecessary is to have the cleaning head 50 located above and surroundingthe alignment mark 12 on a wafer 10 during operation for the cleaning ofthe alignment mark 12.

[0037] Although the present invention has been described with respect tothe embodiment, it will be apparent that changes and modifications, suchas the selective etching of any material using any desired number ofetching products supplied through any desired number of lines to thecleaning apparatus, may be made without departing from the spirit andscope of the invention. Additionally, the apparatus and method may beused to selectively etch any predetermined area of a wafer to remove anymaterial therefrom, using any desired etching products which may beheated or cooled during their use. If desired, the wafer as well as theapparatus may be heated or cooled during use.

What is claimed is:
 1. A removal method for selectively removing amaterial from a wafer using an etchant dispensing apparatus comprising:providing said etchant dispensing apparatus having an inlet thereto foran etchant agent and a tubular member having a thin annular edgethereon; placing said at least one area of said wafer within the annularmember of the etchant dispensing apparatus, the thin annular edge of theannular member of said etchant dispensing apparatus located adjacent aportion of said wafer; aligning said wafer and said etchant dispensingapparatus; dispensing an etchant onto said at least one area by saidetchant dispensing apparatus; and removing said etchant from said wafer.2. The process of claim 1, wherein said placing step includes aligningsaid wafer in a substantially perpendicular position in relation to saidetchant dispensing apparatus.
 3. The process of claim 1, wherein saidaligning comprises aligning said wafer to said etchant dispensingapparatus.
 4. The process of claim 1, wherein said aligning comprisesaligning said etchant dispensing apparatus to said wafer.
 5. The processof claim 1, wherein said aligning comprises aligning said wafersubstantially perpendicular to the thin annular edge of the annularmember of said etchant dispensing apparatus.
 6. The process of claim 1,wherein said aligning includes aligning the thin annular edge of theannular member of said etchant dispensing apparatus substantiallyperpendicular to said portion of said wafer adjacent said at least onearea thereon.
 7. The process of claim 1, wherein said material includesat least one of chemical mechanical planarization process slurrymaterial, a metal material, a photoresist material, a dielectricmaterial, and a polysilicon material.
 8. The process of claim 7, whereinsaid metal material includes a refractory metal.
 9. The process of claim1, wherein said removing said at least one etchant includes removal ofsaid etchant by one of suction and vacuum.
 10. The process of claim 1,further comprising the step of cleaning said wafer.
 11. The process ofclaim 10, wherein the step of cleaning said wafer includes: cleaningsaid wafer with a cleaning agent; and rinsing said wafer in deionizedwater.
 12. The process of claim 1, wherein the etchant includes at leastone of a liquid, a liquid vapor, a gas, ammonia, hydrogen fluoride,nitric acid, hydrogen peroxide, ammonium fluoride, and mixtures thereof.13. A process for selectively removing a material from a wafer in asemiconductor fabrication process, said process comprising: chemicalmechanical planarizing said wafer prior to the removal of said materialfrom said wafer; providing an etchant dispensing apparatus having atubular member, an annular member having a thin annular edge thereon,and an inlet for etchant; aligning said at least one area of said waferand at least a portion of the etchant dispensing apparatus; dispensingan etchant onto said at least one area of said wafer; and removing saidetchant from said wafer.
 14. The process of claim 13, wherein saidaligning includes aligning a portion of said wafer in a substantiallyperpendicular position in relation to said etchant dispensing apparatus.15. The process of claim 13, wherein said aligning includes aligning aportion of said wafer to said etchant dispensing apparatus.
 16. Theprocess of claim 13, wherein said aligning includes aligning saidetchant dispensing apparatus to said wafer.
 17. The process of claim 13,wherein said aligning includes aligning said wafer substantiallyperpendicular to the thin annular edge of said etchant dispensingapparatus.
 18. The process of claim 13, wherein said material includesat least one of chemical mechanical planarization process slurrymaterial, a metal material, a photoresist material, a dielectricmaterial, and a polysilicon material.
 19. The process of claim 18,wherein said metal material includes a refractory metal.
 20. The processof claim 13, wherein said removing said at least one etchant includesremoval of said etchant by one of suction and vacuum.
 21. The process ofclaim 13, further comprising the step of cleaning said wafer.
 22. Theprocess of claim 21, wherein the step of cleaning said wafer includes:cleaning said wafer with a cleaning agent; and rinsing said wafer indeionized water.
 23. A process selectively removing a material from atleast one area of a wafer in a semiconductor fabrication process, saidprocess comprising: providing an etchant dispensing apparatus having anannular portion having a thin annular edge thereon; aligning said atleast one area of said wafer to at least a portion of a thin annularedge of the etchant dispensing apparatus; dispensing an etchant ontosaid at least one area of said wafer by said etchant dispensingapparatus; removing said etchant from said wafer; and chemicalmechanical planarizing said wafer subsequent to the removal of saidmaterial from said at least one area of said wafer.
 24. The process ofclaim 23, wherein said aligning includes aligning said wafer in asubstantially perpendicular position in relation to said etchantdispensing apparatus.
 25. The process of claim 23, wherein said aligningincludes aligning said wafer to a portion of said etchant dispensingapparatus.
 26. The process of claim 23, wherein said aligning includesaligning said etchant dispensing apparatus to said wafer.
 27. Theprocess of claim 23, wherein said aligning includes aligning said wafersubstantially perpendicular to the annular portion of said etchantdispensing apparatus.
 28. The process of claim 23, wherein said materialincludes at least one of a chemical mechanical planarization processslurry material, a metal material, a photoresist material, a dielectricmaterial, and a polysilicon material.
 29. The process of claim 28,wherein said metal material includes a refractory metal.
 30. The processof claim 23, wherein said removing said at least one etchant includesremoval of said etchant by one of suction and vacuum.
 31. The process ofclaim 23, further comprising cleaning said wafer.
 32. The process ofclaim 31, wherein cleaning said wafer includes: cleaning said wafer witha cleaning agent; and rinsing said wafer in deionized water.
 33. Aselective removal method removing at least some of the material from awafer containing an alignment mark comprising: providing an etchantdispensing apparatus having a tubular member having at least one inletand an annular member having a thin annular edge thereon; placing anarea of said wafer within the annular member of the etchant dispensingapparatus having the thin annular edge of the annular member of saidetchant dispensing apparatus located adjacent and above a portion ofsaid wafer; dispensing an etchant onto said area by said etchantdispensing apparatus; and removing said etchant from said wafer.
 34. Theprocess of claim 33, wherein said placing includes aligning said waferin a substantially perpendicular position in relation to said etchantdispensing apparatus.
 35. The process of claim 33, wherein said placingincludes aligning said wafer to said etchant dispensing apparatus. 36.The process of claim 33, wherein said placing includes aligning saidetchant dispensing apparatus to said wafer.
 37. The process of claim 33,wherein said placing includes aligning said wafer substantiallyperpendicular to the thin annular edge of the annular member of saidetchant dispensing apparatus.
 38. The process of claim 33, wherein saidplacing includes aligning the thin annular edge of the annular member ofsaid etchant dispensing apparatus substantially perpendicular to aportion of said wafer adjacent said alignment mark thereon.
 39. Theprocess of claim 33, wherein said material includes at least one of achemical mechanical planarization process slurry material, a metalmaterial, a photoresist material, a dielectric material, and apolysilicon material.
 40. The process of claim 39, wherein said metalmaterial includes a refractory metal.
 41. The process of claim 33,wherein said removing said at least one etchant includes removal of saidetchant by one of suction and vacuum.
 42. The process of claim 33,further comprising cleaning said wafer.
 43. The process of claim 42,wherein cleaning said wafer includes: cleaning said wafer with acleaning agent; and rinsing said wafer in deionized water.
 44. Theprocess of claim 33, wherein the etchant includes at least one of aliquid, a liquid vapor, a gas, ammonia, hydrogen fluoride, nitric acid,hydrogen peroxide, ammonium fluoride, and mixtures thereof.
 45. Aselective removal method for removing at least portions of a materialfrom an area of a wafer containing of an alignment mark comprising:chemical mechanical planarizing said wafer prior to the removal of saidmaterial from said area of said wafer; providing an etchant dispensingapparatus having a tubular member having an inlet and having an annularmember having a thin annular edge thereon; aligning said area of saidwafer to at least a portion of the etchant dispensing apparatus;aligning a portion of a surface of said wafer with at least a portion ofthe thin annular edge of the annular portion of said etchant dispensingapparatus; dispensing an etchant onto said area of said wafer; andremoving said etchant from said wafer.
 46. The process of claim 45,wherein said aligning said area of said wafer to at least a portion ofthe etchant dispensing apparatus includes aligning said wafer in asubstantially perpendicular position in relation to said etchantdispensing apparatus.
 47. The process of claim 45, wherein said aligningsaid at least one area of said wafer to said etchant dispensingapparatus includes aligning said wafer to said etchant dispensingapparatus.
 48. The process of claim 45, wherein said aligning said atleast one area of said wafer to said etchant dispensing apparatusincludes aligning said etchant dispensing apparatus to said wafer. 49.The process of claim 45, wherein said aligning said at least one area ofsaid wafer to said etchant dispensing apparatus includes aligning saidwafer substantially perpendicular to the thin annular edge of saidetchant dispensing apparatus.
 50. The process of claim 45, wherein saidmaterial includes at least one of a chemical mechanical planarizationprocess slurry material, a metal material, a photoresist material, adielectric material, and a polysilicon material.
 51. The process ofclaim 50, wherein said metal material includes a refractory metal. 52.The process of claim 45, wherein said removing said at least one etchantincludes removal of said etchant by one of suction and vacuum.
 53. Theprocess of claim 45, further comprising cleaning said wafer.
 54. Theprocess of claim 53, wherein the cleaning of said wafer includes:cleaning said wafer with a cleaning agent; and rinsing said wafer indeionized water.
 55. A selective removal method for removing materialfrom an area of a wafer having an alignment mark comprising: providingan etchant dispensing apparatus having an annular portion having a thinannular edge thereon; aligning said area of said wafer to the etchantdispensing apparatus; placing adjacent a portion of the surface of saidwafer to at least a portion of the thin annular edge of the annularportion of said etchant dispensing apparatus; dispensing an etchant ontosaid area using said etchant dispensing apparatus; removing said atleast one etchant from said wafer; and chemical mechanical planarizingsaid wafer subsequent to the removal of said material from said area ofsaid wafer.
 56. The process of claim 55, wherein said aligning includesaligning said wafer in a substantially perpendicular position inrelation to said etchant dispensing apparatus.
 57. The process of claim55, wherein said aligning includes aligning said wafer to a portion ofsaid etchant dispensing apparatus.
 58. The process of claim 55, whereinsaid aligning includes aligning said etchant dispensing apparatus tosaid wafer.
 59. The process of claim 55, wherein said aligning includesaligning said wafer substantially perpendicular to the annular portionof said etchant dispensing apparatus.
 60. The process of claim 55,wherein said material includes at least one of a chemical mechanicalplanarization process slurry material, a metal material, a photoresistmaterial, a dielectric material, and a polysilicon material.
 61. Theprocess of claim 60, wherein said metal material includes a refractorymetal.
 62. The process of claim 55, wherein said removing said at leastone etchant includes removal of said etchant by one of suction andvacuum.
 63. The process of claim 55, further comprising cleaning saidwafer.
 64. The process of claim 63, wherein cleaning said waferincludes: cleaning said wafer with a cleaning agent; and rinsing saidwafer in deionized water.